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Datasheet C503 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | C503 | NPN Transistor - 2SC503 |
 Toshiba Semiconductor |
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| 25 | C5030 | NPN Transistor - 2SC5030 2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications Medium Power Amplifier Applications
Unit: mm
• • •
High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 |
Toshiba Semiconductor |
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| 24 | C5032 | NPN Transistor - 2SC5032 Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q F |
 Panasonic |
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| 23 | C5036 | 50A AVALANCHE AUTOMOTIVE CELL DIODE ®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber Te |
 Won-Top Electronics |
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