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C5022 データシート PDF ( Data ) |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | C5022 | 2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.Datasheet.jp 12 3 1. Base 2. Collector 3 |
 Hitachi Semiconductor |
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C50 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| C5066 | 2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collecto |
 Toshiba |
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| C503B-RAS | 5-mm Red and Amber Round LEDs Cree® 5-mm Red and Amber Round LEDs C503B-RAS/RAN/AAS/AAN (15 degrees) C503B-RBS/RBN/ABS/ABN (23 degrees) C503B-RCS/RCN/ACS/ACN (30 degrees) Data Sheet These round LED families offer superior light output for excellent readability in outdoor applications. The |
 CREE |
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| C50xx | Fixed Chip Inductors C5000 Series Fixed Chip Inductors With Tab Without Tab Terminations Terminations Part Number C5001 C5002 C5003 C5004 C5005 C5006 C5007 C5008 C5009 C5010 C5011 C5012 C5013 C5014 C5015 C5016 C5017 C5018 C5019 C5020 C5021 C5022 C5023 C5024 C5025 C5026 C5027 C5028 C5029 C5030 C5031 |
 Coast |
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| C5012 | 2SC5012 DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation ORDERING INFORMATION |
 NEC |
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| C503 | 2SC503
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 Toshiba Semiconductor |
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| C5092 | 2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collect |
Toshiba |
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