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C5022 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | C5022 | 2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.Datasheet.jp 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.Datasheet.jp/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vo |
 Hitachi Semiconductor |
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C5 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| C5093 | 2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collect |
 Toshiba |
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| C5046 | 2SC5046 Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). |
 Sanyo Semicon Device |
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| C5347 | 2SC5347 Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET 2SC5347 NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : |
 Sanyo |
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| C5065 | 2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating |
Toshiba |
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