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C5022 データシート PDF 検索 |
| 番号 | 部品番号 | 部品説明 | メーカ | |
| 1 | C5022 | 2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.Datasheet.jp 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.Datasheet.jp/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vo |
 Hitachi Semiconductor |
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C5 データシート - 検索結果 |
| 部品番号 | 部品説明 | メーカ | |
| C5064 | 2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 2SC5064 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit |
 Toshiba |
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| C50VB160 | GLASS PASSIVATED BRIDGE RECTIFIERS C50VB160 GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Surge overload -500 amperes peak ●Low forward voltage drop ●Mounting position :Any ●Weight: 44.5g .071(1.8) .039(1.0) 1.412 MAX (29.0) .256(6.5) .217(5.5) .354(9.0) .315(8.0) 1.417 MAX (36.0) .295(7.5) .256(6.5) R1.75 |
 HY ELECTRONIC |
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| C5SMF-GJN | 5-mm Oval LED CLD-CT201.006 PRODUCT FAMILY DATA SHEET Cree® Screen Master® 5-mm Oval LED C5SMF-RJS/GJS/BJS C5SMF-RJN/GJN/BJN C5SME-RJS/RJN PRODUCT DESCRIPTION The oval LED is specifically designed for variable-message signs and passenger-information signs.The ovalshaped radiation pattern a |
 CREE |
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| C5545 | 2SC5545 2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline Note: Marking is “ZS-”. MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. |
Hitachi Semiconductor |
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