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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON =

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellen

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 2SC4253 TV Final Picture IF Amplifier Applications · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base c

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junct

Ordering number:EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Suitable for sets w

TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm • Low noise figure: NF = 2.8dB (typ.) • High power gain VCC = 4.5 V: Gpb = 15dB (typ.) • Excellent forward AGC characteristics Absolute Maximum Ratings (Ta = 25°