2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC3320 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverte

Ordering number:EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [

DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications The C30902EH series of avalanche photodiodes is ideal for a wide range of applications, including LIDAR, range-finding, small-signal fluorescence, photon counti

Ordering number:EN2153A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=2.2kΩ, R2=2.

C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] April 2011 Issue date: TDK MLCC US Catalog Version B11 Free Datasheet h