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Datasheet BUZ90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 33 | BUZ90 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 90
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 90
VDS
600 V
ID
4.5 A
RDS(on)
1.6 Ω
Package TO-220 AB
Ordering Code C67078-S1321-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A
ID |
 Siemens Semiconductor Group |
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| 32 | BUZ900 | (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET MAGNA
TEC
25.0
+0.1 -0.15
BUZ900 BUZ901
MECHANICAL DATA Dimensions in mm
N–CHANNEL POWER MOSFET
8.7 Max. 1.50 Typ. 11.60 ± 0.3
10.90 ± 0.1
POWER MOSFETS FOR AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED S |
 Magna |
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| 31 | BUZ900 | Trans MOSFET N-CH 160V 8A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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| 30 | BUZ900DP | (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET MAGNA
TEC
20.0 5.0
BUZ900DP BUZ901DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0 1.0
• HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • |
 ETC |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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