データシート PDF 検索 - DataSheet.jp


BUZ80 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
8 BUZ80

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 80 VDS 800 V ID 3.1 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1309-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.1 Unit A ID IDpuls 12.5 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limite

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ80 データシート pdf
7 BUZ80

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 4Ω < 4Ω ID 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT2

STMicroelectronics
STMicroelectronics
BUZ80 データシート pdf
6 BUZ80

Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
BUZ80 データシート pdf
5 BUZ80A

Power Transistor

Infineon
Infineon
BUZ80A データシート pdf
4 BUZ80A

SIPMOS Power Transistor (N channel Enhancement mode)

BUZ 80A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 80A VDS 800 V ID 3A RDS(on) 3Ω Package TO-220 AB Ordering Code C67078-A1309-A3 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 800 800 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 3 TC = 50 °C Pulsed drain curre

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ80A データシート pdf
3 BUZ80A

N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR

® BUZ80A N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A V DSS 800 V R DS(on) <3Ω ID 3.8 A s s s s s s s TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 APPLICATIONS s H

STMicroelectronics
STMicroelectronics
BUZ80A データシート pdf
2 BUZ80A

Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
BUZ80A データシート pdf


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