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BUZ76 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
6 BUZ76

SIPMOS Power Transistor

BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 3A RDS(on) 1.8 Ω Package Ordering Code BUZ 76 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 °C ID A 3 Pulsed drain current TC = 25 °C IDpuls 12 IAR E AR E AS Aval

Infineon Technologies AG
Infineon Technologies AG
BUZ76 データシート pdf
5 BUZ76

3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET

BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters,

Intersil Corporation
Intersil Corporation
BUZ76 データシート pdf
4 BUZ76

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 VDS 400 V ID 3A RDS(on) 1.8 Ω Package TO-220 AB Ordering Code C67078-S1315-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ76 データシート pdf
3 BUZ76A

SIPMOS Power Transistor

BUZ 76 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 2.7 A RDS(on) 2.5 Ω Package Ordering Code BUZ 76 A TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID A 2.7 Pulsed drain current TC = 25 °C IDpuls 11 IAR E AR E

Infineon Technologies AG
Infineon Technologies AG
BUZ76A データシート pdf
2 BUZ76A

2.6A/ 400V/ 2.500 Ohm/ N-Channel Power MOSFET

BUZ76A Semiconductor Data Sheet October 1998 File Number 2265.1 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, m

Intersil Corporation
Intersil Corporation
BUZ76A データシート pdf
1 BUZ76A

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 76 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 A VDS 400 V ID 2.7 A RDS(on) 2.5 Ω Package TO-220 AB Ordering Code C67078-S1315-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.7 Unit A ID IDpuls 11 TC = 23 °C Pulsed drain current TC = 25 °C Avalanche current,l

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ76A データシート pdf


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