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BUZ71 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
16 BUZ71

N-Channel Enhancement Mode Power MOS Transistors

SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.Datasheet.jp/ Symbol VDS IDS IDM IAR EAS EAR V

Comset Semiconductors
Comset Semiconductors
BUZ71 データシート pdf
15 BUZ71

14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFET

BUZ71 Data Sheet June 1999 File Number 2418.2 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive po

Intersil Corporation
Intersil Corporation
BUZ71 データシート pdf
14 BUZ71

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1316-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 14 Unit A ID IDpuls 56 TC = 28 °C Pulsed drain current TC = 25 °C Avalanc

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ71 データシート pdf
13 BUZ71

N - CHANNEL 50V - 0.085W - 17A TO-220 STripFET] POWER MOSFET

® BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET™ POWER MOSFET T YPE BUZ71 s s s s s V DSS 50 V R DS(on) < 0.1 Ω ID 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-

STMicroelectronics
STMicroelectronics
BUZ71 データシート pdf


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