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BUZ60 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
5 BUZ60

SIPMOS Power Transistor

Infineon Technologies AG
Infineon Technologies AG
BUZ60 データシート pdf
4 BUZ60

5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET

Intersil Corporation
Intersil Corporation
BUZ60 データシート pdf
3 BUZ60

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A ID IDpuls 13.5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limit

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ60 データシート pdf
2 BUZ60B

4.5A/ 400V/ 1.500 Ohm/ N-Channel Power MOSFET

Intersil Corporation
Intersil Corporation
BUZ60B データシート pdf
1 BUZ60B

main ratings

BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, mot

Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ60B データシート pdf


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