Datasheet BUK6213-30C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BUK6213-30C	N-channel TrenchMOS intermediate level FET BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This produ	NXP Semiconductors

BUK6213- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BUK6213-30C	N-channel TrenchMOS intermediate level FET BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS te	NXP Semiconductors
BUK6213-30A	TrenchMOS Intermediate level FET BUK6213-30A TrenchMOS™ Intermediate level FET M3D300 Rev. 02 — 22 September 2003 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ tech	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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