Datasheet BSS82C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BSS82C	PNP Silicon Switching Transistors SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emi	Kexin	transistor
2	BSS82C	GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO THERMAL CHARACTERISTICS Characteristic Symbol 'Total Device Dissipation, T/\ = 25°C Derate above 25°C PD Storage Temperature Tsto "Thermal Resistance Junction to Ambient RflJ	Motorola Semiconductors	transistor
3	BSS82C	PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702	Siemens Semiconductor Group	transistor
4	BSS82C	PNP Silicon Switching Transistors BSS80, BSS82 PNP Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3	Infineon Technologies AG	transistor
5	BSS82C	(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 PARTMARKING DETAILS 7 BSS82B - CL BSS82C - CM BSS82B BSS82C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipati	Zetex Semiconductors	transistor

BSS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BSS100	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S2	Siemens Semiconductor Group	transistor
2	BSS100	N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces	Fairchild Semiconductor	transistor
3	BSS101	SIPMOS Small-Signal Transistor BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S493 Q62702-S636 Tape and Re	Siemens Semiconductor	transistor
4	BSS110	P-Channel Enhancement Mode Field Effect Transistor May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st	Fairchild Semiconductor	transistor
5	BSS110	SIPMOS Small-Signal Transistor BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67	Siemens Semiconductor	transistor
6	BSS110	P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product speciﬁcation P-channel enhancement mode vertical D-MOS transistor F	NXP Semiconductors	transistor
7	BSS119	SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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