Datasheet BSO612CVG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BSO612CVG	Small-Signal-Transistor Rev. 2.1 BSO 612 CV G SIPMOS® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current · Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.12 3 P	Infineon	transistor

BSO Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BSO033N03MSG	Power-MOSFET BSO033N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) •	Infineon	mosfet
2	BSO040N03MSG	Power-MOSFET BSO040N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) •	Infineon Technologies	mosfet
3	BSO052N03S	OptiMOS2 Power-Transistor BSO052N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on	Infineon Technologies AG	transistor
4	BSO064N03S	OptiMOS2 Power-Transistor BSO064N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on	Infineon Technologies AG	transistor
5	BSO072N03S	OptiMOS2 Power-Transistor BSO072N03S OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on	Infineon Technologies AG	transistor
6	BSO080P03NS3EG	Power-Transistor "%&$!"#b % % (>.;?6?@<> 7NJ\]ZN[ QC:? 8=6 ) 92 ? ? 6=:? , ( Q* E2 =:7:65 2 44@B5:? 8 $ )# 7@BD2 B86D2 AA=:42 D:@? C Q T @A6B2 D:? 8 D6> A6B2 DEB6 Q) =H . CA64:2 ==I CE:D65 7@B? @D63 @@< 2 AA=:42 D:@? C Q , AB@D64D65 Q) 3 7B66 A=2 D:? 8 + @" , 4@> A=:2 ? D Q2	Infineon Technologies	transistor
7	BSO080P03NS3G	Power-Transistor OptiMOS™3 P3-Power-Transistor Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switc	Infineon Technologies	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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