Datasheet BSO080P03NS3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BSO080P03NS3G	Power-Transistor OptiMOS™3 P3-Power-Transistor Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switc	Infineon Technologies

BSO080P03N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BSO080P03NS3EG	Power-Transistor "%&$!"#b % % (>.;?6?@<> 7NJ]ZN[ QC:? 8=6 ) 92 ? ? 6=:? , ( Q* E2 =:7:65 2 44@B5:? 8 $ )# 7@BD2 B86D2 AA=:42 D:@? C Q T @A6B2 D:? 8 D6> A6B2 DEB6 Q) =H . CA64:2 ==I CE:D65 7@B? @D63 @@< 2 AA=:42 D:@? C Q , AB@D64D65 Q) 3 7B66 A=2 D:? 8 + @"	Infineon Technologies
BSO080P03NS3G	Power-Transistor OptiMOS™3 P3-Power-Transistor Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery ma	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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