|
|
Datasheet BGB540 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BGB540 | Active Biased RF Transistor Data sheet, BGB540, Sept. 2002
BGB540
Active Biased RF Transistor
MMIC
Wireless Silicon Discretes
N e v e r s t o p t h i n k i n g .
Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
© Infineon Technologies AG 2002. All Rights Reserved.
Attentio |
 Infineon Technologies AG |
 |
| 2 | BGB540 | A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs Data sheet, BGB540, Sept. 2002
BGB540
Active Biased RF Transistor
MMIC
Wireless Silicon Discretes
N e v e r s t o p t h i n k i n g .
Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
© Infineon Technologies AG 2002. All Rights Reserved.
Attentio |
Infineon Technologies AG |
|
| 1 | BGB540LNA | BGB540 as a 1.85 GHz Low Noise Amplifier %*% /1$ 6LOLFRQ 'LVFUHWHV
%*% DV D *+] /RZ 1RLVH $PSOLILHU
9FF
ID
IBias
5 0Ω
IC
120pF
&
10nF
&
2.7kΩ
5
/
1.8nH 10Ω 4 3
5
Out
In
0Ω
5
18pF 1 2
&
BGB540
,&
2.2pF
&
5.6nH
/
)LJXUH 7DEOH 3DUDPHWHU
$SSOLFDWLRQ &LUFXLW 'LDJUDP 0HDVXUHG 3HUIRUPDQFH |
Infineon Technologies AG |
|
| Esta página es del resultado de búsqueda del BGB540. Si pulsa el resultado de búsqueda de BGB540 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |