BF1009SR データシート PDFこの部品の機能は「SilICon N-channel Mosfet Tetrode」です。 |
検索結果を表示する |
部品番号 |
BF1009SR Silicon N-Channel MOSFET Tetrode BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output Infineon Technologies AG |
文字列「 BF1009 」「 1009SR 」で始まる検索結果です。 |
部品説明 |
BF1009 Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Siemens Semiconductor Group |
BF1009S Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 P Siemens Semiconductor Group |
BF1009S Silicon N-Channel MOSFET Tetrode BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe hand Infineon Technologies AG |
BF1009SW Silicon N-Channel MOSFET Tetrode BF1009SW Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled 3 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, obse Infineon |
11HS1009 Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 11HS SERIES 1.8° Key Features I High Accuracy I Low Inertia I Small Size General Specifications Bi-polar Model Number 11HS1005 11HS1006 11HS1007 11HS1008 11HS3005 11HS5005 11HS5007 11HS5008 11HS5009 Resistance Inductance Ra ETC |
1S1009 Diode ( Rectifier ) American Microsemiconductor |
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