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BDX85B データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
2 BDX85B

Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDX85/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C APPLICATIONS ·Designed for use in power linear and swi

Inchange Semiconductor
Inchange Semiconductor
BDX85B データシート pdf
1 BDX85B

Bipolar NPN Device

BDX85B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312)

Seme LAB
Seme LAB
BDX85B データシート pdf


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