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Datasheet BCW61 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BCW61 | PNP Transistors SMD Type
■ Features
● Low current ● Low voltage ● General Purpose Transistor
Transistors
PNP Transistors BCW61 (KCW61)
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
Unit: mm
+0.21.6 -0.1
0.55 0.4
+0.22.8 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.2
+0.21.1 -0.1
0.15 +0.02 -0.02
1. Base 2. Emitter 3 | Kexin | transistor |
2 | BCW61 | PNP Silicon Epitaxial Planar Transistors BCW61
PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification.
These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the NPN transistors BCW60 are recommended.
SOT-23 Plastic Package
Absolute Maximum | SEMTECH | transistor |
3 | BCW61 | PNP General Purpose Amplifier BL Galaxy Electrical
PNP General Purpose Amplifier
FEATURES
z Low current(max.100mA). z Low voltage(max.32v).
Pb
Lead-free
APPLICATIONS
z This device is designed for general purpose amplifier and switching applications.
Production specification
BCW61
ORDERING INFORMATION
Type No.
Marking
BC | Galaxy Electrical | amplifier |
4 | BCW61 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW61 series PNP general purpose transistors
Product specification Supersedes data of 1997 May 28 1999 Apr 12
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES • Low current (max. 100 mA) • Low v | NXP Semiconductors | transistor |
5 | BCW61 | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) PNP Silicon AF Transistors
BCW 61 BCX 71
q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN)
Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX | Siemens Semiconductor Group | transistor |
BCW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BCW29 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌComplementary to BCW31/32
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current KEC transistor | | |
2 | BCW29 | PNP General Purpose Transistors SMD Type
TransistIoCrs
PNP General Purpose Transistors BCW29,BCW30
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
VCBO
Colle Kexin transistor | | |
3 | BCW29 | Silicon Planar Epitaxial Transistor Philips transistor | | |
4 | BCW29 | GENERAL PURPOSE TRANSISTOR BCW29,30
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO VCBO vESO
ic
THERMAL CHARACTERISTICS
Characteristic
*Total Device Motorola Semiconductors transistor | | |
5 | BCW29 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BCW29 BCW30
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCW29 = C1 BCW30 = C2
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2 CDIL transistor | | |
6 | BCW29 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW29; BCW30 PNP general purpose transistors
Product specification Supersedes data of 1997 Sep 03 1999 Apr 13
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES • Low current (max. 100 mA) • Low v NXP Semiconductors transistor | | |
7 | BCW29 | Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions - Maße [mm] 1=B 2=E 3=C
2.5 max 1.3±0.1
Power dissipation – Verlus Diotec Semiconductor transistor | |
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