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Datasheet BCV63B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCV63B | NPN general purpose double transistors BCV63; BCV63B
NPN general-purpose double transistors
Rev. 4 — 4 August 2010
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number
BCV63 BCV63B
|  NXP Semiconductors | transistor |
BCV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCV26 | PNP Darlington Transistors BCV26 / BCV46
PNP Darlington Transistors
for preamplifier input applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Stora  SEMTECH transistor | | |
| 2 | BCV26 | PNP Darlington transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCV26; BCV46 PNP Darlington transistors
Product specification Supersedes data of 1997 Apr 23 1999 Apr 08
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES • High current (max. 500 mA) • Low voltage (m NXP Semiconductors transistor | | |
| 3 | BCV26 | PNP SILICON PLANAR DARLINGTON TRANSISTORS SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat)  Zetex Semiconductors transistor | | |
| 4 | BCV26 | PNP Silicon Darlington Transistors (For general AF applications High collector current) PNP Silicon Darlington Transistors
BCV 26 BCV 46
For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN)
q
Type BCV 26 BCV 46
Marking FDs FEs
Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475
Pin Configuration 1 2 3 B E C
Pack  Siemens Semiconductor Group transistor | | |
| 5 | BCV26 | PNP Darlington Transistor BCV26
Discrete POWER & Signal Technologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector  Fairchild Semiconductor transistor | | |
| 6 | BCV26 | PNP Silicon Darlington Transistors BCV26, BCV46
PNP Silicon Darlington Transistors
For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN)
3
2 1
VPS05161
Type BCV26 BCV46
Maximum Ratings Parameter
Marking FDs FEs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23  Infineon Technologies AG transistor | | |
| 7 | BCV26 | Surface mount Si-Epitaxial PlanarTransistors BCV26, BCV46 PNP
Darlington Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic case Kunststoffgehäuse
1.3  Diotec Semiconductor transistor | |
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