Datasheet BCV46 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCV46	PNP DARLINGTON TRANSISTOR Features • BVCEO > -60V • Darlington Transistor hFE > 10k @ 100mA for high gain • IC = -500mA High Continuous Collector Current • Complementary Darlington PNP Type: BCV47 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) •	Diodes	transistor
2	BCV46	PNP Darlington Transistors BCV26 / BCV46 PNP Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Stora	SEMTECH	transistor
3	BCV46	PNP Darlington transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product speciﬁcation Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product speciﬁcation PNP Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (m	NXP Semiconductors	transistor
4	BCV46	PNP Silicon Darlington Transistors (For general AF applications High collector current) PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Pack	Siemens Semiconductor Group	transistor
5	BCV46	PNP SILICON PLANAR DARLINGTON TRANSISTORS SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat)	Zetex Semiconductors	transistor
6	BCV46	PNP Silicon Darlington Transistors BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 3 2 1 VPS05161 Type BCV26 BCV46 Maximum Ratings Parameter Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23	Infineon Technologies AG	transistor
7	BCV46	Surface mount Si-Epitaxial PlanarTransistors BCV26, BCV46 PNP Darlington Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Version 2004-01-20 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3	Diotec Semiconductor	transistor

BCV Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCV26	PNP Darlington Transistors BCV26 / BCV46 PNP Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Stora	SEMTECH	transistor
2	BCV26	PNP Darlington transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product speciﬁcation Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product speciﬁcation PNP Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (m	NXP Semiconductors	transistor
3	BCV26	PNP SILICON PLANAR DARLINGTON TRANSISTORS SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat)	Zetex Semiconductors	transistor
4	BCV26	PNP Silicon Darlington Transistors (For general AF applications High collector current) PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Pack	Siemens Semiconductor Group	transistor
5	BCV26	PNP Darlington Transistor BCV26 Discrete POWER & Signal Technologies BCV26 C E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector	Fairchild Semiconductor	transistor
6	BCV26	PNP Silicon Darlington Transistors BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 3 2 1 VPS05161 Type BCV26 BCV46 Maximum Ratings Parameter Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23	Infineon Technologies AG	transistor
7	BCV26	Surface mount Si-Epitaxial PlanarTransistors BCV26, BCV46 PNP Darlington Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Version 2004-01-20 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3	Diotec Semiconductor	transistor
8	BCV27	NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV27 TRANSISTOR (NPN) SOT–23 FEATURES  High Collector Current  High Current Gain MARKING:FF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage	JCST	transistor
9	BCV27	NPN Darlington Transistors BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Junction Temperature Stora	SEMTECH	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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