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Datasheet BAS4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAS4 | CASE 318-08/ STYLE 8 SOT-23 TO-236AB MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS40LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface moun |  Motorola Inc | data |
| 2 | BAS4 | Schottky Diodes BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ These diodes feature very low turn-on
Top View
.056 (1.43) .052 (1.33)
voltage and fast switching.
♦ These devices are protected by a PN
junction guard ring against excessive voltage, such as electrostat |  General Semiconductor | diode |
| 3 | BAS4 | Low-leakage diode DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BAS45AL Low-leakage diode
Product specification Supersedes data of 1999 May 04 1999 May 28
Philips Semiconductors
Product specification
Low-leakage diode
FEATURES • Continuous reverse voltage: max. 125 V • Repetitive peak forward c |  NXP Semiconductors | diode |
| 4 | BAS4 | SCHOTTKY array SERIES BAS40
8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax: (480) 947-1503
and
BAS70
SCHOTTKYarray™ SERIES
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are provided for general-purpose use in high-speed switching, mixers and detector application |  Microsemi Corporation | data |
| 5 | BAS4 | Silicon Schottky Diode BAS40.../BAS140W
Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing
BAS140W BAS40-02L
BAS40
3
BAS40-04
3
BAS40-05 BAS40-05W
3
BAS40-06 BAS40-06W
3
1
2
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
|  Infineon Technologies AG | diode |
BAS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
VOLTAGE 100 Volts
FEATURES
• Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICA  Pan Jit International diode | | |
| 2 | BAS101 | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 3 | BAS101S | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 4 | BAS11 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o NXP Semiconductors rectifier | | |
| 5 | BAS116 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES z Low leakage current applications z Medium speed switching times
MARKING: JV
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re  JCET diode | | |
| 6 | BAS116 | LOW LEAKAGE SWITCHING DIODE BAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetiti  SEMTECH diode | | |
| 7 | BAS116 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance Pan Jit International diode | |
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