|
|
Datasheet BA01232 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | BA01232 | GaAs RF amplifier designed
MITSUBISHI SEMICONDUCTOR
Preliminary
Specifications are subject to change without notice.
BA01232
HBT HYBRID IC OUTLINE DRAWING
Unit : millimeters
DESCRIPTION
The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone.
‡@ FEATURES
Low voltage Vcc=3.5V High power |
Mitsubishi Electric Semiconductor |
BA01 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
BA01303 | Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module |
Mitsubishi Electric |
|
BA01232 | GaAs RF amplifier designed |
Mitsubishi Electric Semiconductor |
|
BA01207 | GaAs HBT HYBRID IC |
Mitsubishi Electric |
Esta página es del resultado de búsqueda del BA01232. Si pulsa el resultado de búsqueda de BA01232 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |