B6010D PDF Datasheet

N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc

B6010S Single N-Channel 60-V (D-S) MOSFET General Description The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 60V operation voltage is well suited in swit

® Product Summary Prototyping Kits OVERVIEW In order to support initial design and prototyping activities involving Mitel components, a number of ancillary component kits are available. These include the components which are utilized on the ISDN EXPRESS family of board level p

www.vishay.com V60100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-220AB V60100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop,

WWW.Microsemi .COM SCOTTSDALE DIVISION 1N5985 thru 1N6031-1, e3 DO-35 Axial-Leaded 500 mW Zener Diodes DESCRIPTION The popular 1N5985 thru 1N6031 series of 0.5 watt Zener Voltage Regulators provides a selection from 2.4 to 200 volts in standard 5% or 10% tolerances as well as