B4018 データシート PDFこの部品の機能は「Saw Components」です。 |
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部品番号 |
B4018 SAW Components www.Datasheet.jp SAW Components Low-Loss Duplexer for Mobile Communication Data Sheet Features q Compact RF duplexer for cordless telephone B4018 926,25 MHz 903,75 MHz Ceramic package QCC8B ISM EPCOS |
文字列「 B4018 」「 4018 」で始まる検索結果です。 |
部品説明 |
2SK4018 DC-DC Converter and Motor Drive Applications 2SK4018 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 −π−MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 5.2±0.2 1.5±0.2 Unit: mm 0.6 MAX. 1� Toshiba Semiconductor |
APM4018NU N-Channel Enhancement Mode MOSFET APM4018NU N-Channel Enhancement Mode MOSFET Features • 40V/60A, RDS(ON)=6.5mΩ (typ.) @ VGS=10V RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V Pin Description D G S • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Top ANPEC |
APT4018BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT4016BN 400V ® 31.0A 0.16Ω 29.0A 0.18Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT4018BN 400V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specif Advanced Power Technology |
APT4018HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT4018HVR 400V 22A 0.180Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster Advanced Power Technology |
AS8C401800 3.3V Synchronous SRAMs 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect ◆ ◆ AS8C403600 AS8C401800 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 150MHz 3.8ns clock access time LBO input s Alliance Semiconductor |
AS8C401800-QC150N 3.3V Synchronous SRAMs 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect ◆ ◆ AS8C403600 AS8C401800 Features 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial: – 150MHz 3.8ns clock access time LBO input s Alliance Semiconductor |
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