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Datasheet B1116 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | B1116 | PNP Transistor - 2SB1116 DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/ |
 NEC |
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| 2 | B1116 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A
1. EMITTER 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
S |
 JCST |
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| 1 | B1116A | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A
1. EMITTER 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
S |
JCST |
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