AWB589 データシート PDFこの部品の機能は「Wide-band Medium Power Amplifier MmIC」です。 |
検索結果を表示する |
部品番号 |
AWB589 Wide-band Medium Power Amplifier MMIC AWB589 AWB589 Data Sheet 30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficienc ASB |
文字列「 AWB589 」「 589 」で始まる検索結果です。 |
部品説明 |
1165892 High power NPN silicon power transistors 1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package Multicomp |
1165899 High power NPN silicon transistors 1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m Multicomp |
1N4589 Diode Switching 300V 150A 2-Pin DO-8 New Jersey Semiconductor |
1N4589A Diode Switching 300V 150A 2-Pin DO-8 New Jersey Semiconductor |
1N5589 Zener Diode / Rectifier New Jersey Semiconductor |
1N5589A Zener Diode / Rectifier New Jersey Semiconductor |
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