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Datasheet AVD090P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AVD090P | NPN SILICON RF POWER TRANSISTOR AVD090P
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L PILL (A) DESCRIPTION:
The ASI AVD090P is Designed for
C A .100x45°
FEATURES:
• • • Omnigold™ Metalization System
D
B
ØG
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θ JC 6.5 A PEAK
DIM MINIMUM
inches / mm inches / mm
E
F
MAXIMU |  Advanced Semiconductor | transistor |
AVD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AVD-LS10 | AUDIO CD/DVD RECEIVER SERVICE MANUAL http://www.xiaoyu163.com
376315150 QQ SERVICE MANUAL
Ver 1.1 2004. 05
AVD-LS10 892498299
AEP Model UK Model
TEL
TEL 13942296513
Model Name Using Similar Mechanism Mechanism Type Base Unit Name Optical Pick-up Name NEW DP-5RM NEW NEW
13942296513
SPECIFICATIONS
TEL 13942296513
Amplifier section  Sony receiver | | |
| 2 | AVD002F | NPN SILICON RF POWER TRANSISTOR AVD002F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B)
A
DESCRIPTION:
The ASI AVD002F is Designed for
C B
.100 X 45° ØD .088 x 45° CHAMFER
FEATURES:
• • • Omnigold™ Metalization System
E F G H K
I
J
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC 250 mA 37 V 10 W @ TC ≤ Advanced Semiconductor transistor | | |
| 3 | AVD002P | NPN SILICON RF POWER TRANSISTOR AVD002P
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L PILL (A) DESCRIPTION:
The ASI AVD002P is Designed for
A .100x45°
FEATURES:
• • • Omnigold™ Metalization System
C B
ØG
D
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θ JC 250 mA 37 V 10 W @ TC ≤ 100 OC -65 OC to +200 OC -65 OC t Advanced Semiconductor transistor | | |
| 4 | AVD004 | NPN SILICON RF POWER TRANSISTOR AVD004F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B) DESCRIPTION:
ØD A .100 X 45° .088 x 45° CHAMFER
The ASI AVD004F is Designed for
C B
FEATURES:
• • • Omnigold™ Metalization System
E F G H J K
I
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θ JC 650 mA PEAK 32 V 18 W
PEAK
Advanced Semiconductor transistor | | |
| 5 | AVD004 | NPN SILICON RF POWER TRANSISTOR AVD004F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B) DESCRIPTION:
ØD A .100 X 45° .088 x 45° CHAMFER
The ASI AVD004F is Designed for
C B
FEATURES:
• • • Omnigold™ Metalization System
E F G H J K
I
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θ JC 650 mA PEAK 32 V 18 W
PEAK
Advanced Semiconductor transistor | | |
| 6 | AVD004F | NPN SILICON RF POWER TRANSISTOR AVD004F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B) DESCRIPTION:
ØD A .100 X 45° .088 x 45° CHAMFER
The ASI AVD004F is Designed for
C B
FEATURES:
• • • Omnigold™ Metalization System
E F G H J K
I
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θ JC 650 mA PEAK 32 V 18 W
PEAK
Advanced Semiconductor transistor | | |
| 7 | AVD004P | NPN SILICON RF POWER TRANSISTOR AVD004P
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L PILL(A) DESCRIPTION:
The ASI AVD004P is Designed for
A .100x45°
FEATURES:
• • • Omnigold™ Metalization System
C B
ØG
D
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θ JC 650 mA PEAK 32 V 18 W
PEAK
DIM A B C D E F G .275 / 6.99 MIN Advanced Semiconductor transistor | |
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