AUIRLR2905Z データシート PDFこの部品の機能は「Power Mosfet ( Transistor )」です。 |
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部品番号 |
AUIRLR2905Z Power MOSFET ( Transistor ) PD - 97583 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● ● AUIRLR2905Z HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperatur International Rectifier |
文字列「 AUIRLR2905 」「 2905Z 」で始まる検索結果です。 |
部品説明 |
AUIRLR2905 Power MOSFET ( Transistor ) AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjm Infineon |
AUIRLR2905 HEXFET Power MOSFET AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Fr International Rectifier |
29050H HD29050 HD29050 Dual Differential Line Drivers / ReceiversWith 3 State Outputs The HD29050 features differential line drivers / receivers with three state output designed to meet the spec of EIA RS – 422A and 423A. Each device has two drivers / receivers in a 16 p ETC |
2N-PN2905A PNP SILICON TRANSISTORS Micro Electronics |
2N2905 PNP switching transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching trans NXP Semiconductors |
2N2905 GENERAL PURPOSE AMPLIFIERS AND SWITCHES 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose ap STMicroelectronics |
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