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Datasheet ATF-13736 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET 2–16 GHz Low Noise Gallium Arsenide FET Technical Data
ATF-13736
Features
• Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and |
.gif "Agilent(Hewlett-Packard)"){kind=logo} Agilent(Hewlett-Packard) |
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| 2 | ATF-13736-STR | 2-16 GHz Low Noise Gallium Arsenide FET 2–16 GHz Low Noise Gallium Arsenide FET Technical Data
ATF-13736
Features
• Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and |
Agilent(Hewlett-Packard) |
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| 1 | ATF-13736-TR1 | 2-16 GHz Low Noise Gallium Arsenide FET 2–16 GHz Low Noise Gallium Arsenide FET Technical Data
ATF-13736
Features
• Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz • High Associated Gain: 9.0␣ dB Typical at 12␣ GHz • High Output Power: 17.5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and |
Agilent(Hewlett-Packard) |
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