AT49LV4096-15TI データシート PDFこの部品の機能は「4-megabit 256k X 16 3-volt Only Cmos Flash Memory」です。 |
検索結果を表示する |
部品番号 |
AT49LV4096-15TI 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words ATMEL Corporation |
文字列「 AT49LV409615 」「 49LV4096 」で始まる検索結果です。 |
部品説明 |
AT49LV4096 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
AT49LV4096-12RC 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
AT49LV4096-12RI 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
AT49LV4096-12TC 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
AT49LV4096-12TI 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
AT49LV4096-15RC 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory Features • • • • • • • • • • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Para ATMEL Corporation |
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