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Datasheet AT49BV160 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
55 | AT49BV160 | (AT49xV160 / AT49xV161) Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • •
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individ |
ATMEL Corporation |
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54 | AT49BV1604 | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
ATMEL Corporation |
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53 | AT49BV1604 | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features
• 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout Fast Wor |
ATMEL Corporation |
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52 | AT49BV1604-11UI | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory Features
• 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout Fast Wor |
ATMEL Corporation |
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Número de pieza | Descripción | Fabricantes | |
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