| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | AT49BV040-20CI | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Power |
 ATMEL Corporation |
|
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Recommended search results related to AT49BV040-20CI |
| Part No | Description ( Function) | Manufacturers | |
| AT49BV040-20CC | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programmin |
ATMEL Corporation |
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| AT49BV040-20JC | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programmin |
ATMEL Corporation |
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| AT49BV040-20JI | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programmin |
ATMEL Corporation |
|
| AT49BV040-20TC | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programmin |
ATMEL Corporation |
|
| AT49BV040-20TI | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programmin |
ATMEL Corporation |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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