| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | AT28HC256N | High-speed Parallel EEPROM Features • Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and S |
 ATMEL Corporation |
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Recommended search results related to AT28HC256N |
| Part No | Description ( Function) | Manufacturers | |
| AT28HC256 | 256K (32K x 8) High-speed Parallel EEPROM Features • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • Low |
ATMEL Corporation |
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| ISL28256 | (ISL28156 / ISL28256) 39uA Micropower Single and Dual Precision Rail-to-Rail Input-Output (RRIO) Low Input Bias Current Op Amps ® ISL28156, ISL28256 Data Sheet February 27, 2007 FN6154.2 39µA Micropower Single and Dual Precision Rail-to-Rail Input-Output (RRIO) Low Input Bias Current Op Amps The ISL28156 and ISL28256 are micropower precision operational amplifiers optimized for single supply operation |
 Intersil Corporation |
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| M24L28256DA | 2-Mbit (256K x 8) Pseudo Static RAM ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected M24L28256DA 2-Mbit (256K x 8) Pseu |
 Elite Semiconductor Memory Technology |
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| M24L28256SA | 2-Mbit (256K x 8) Pseudo Static RAM ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected M24L28256SA 2-Mbit (256K x 8) Pseu |
Elite Semiconductor Memory Technology |
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| M28256 | 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection M28256 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: – 90ns at 5V – 120ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28256 – 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Wri |
 STMicroelectronics |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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