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Datasheet AT-332 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | AT-332 | Voltage Variable Absorptive Attenuator DC - 2 GHz Voltage Variable Absorptive Attenuator AT-332, AT-337 DC - 2 GHz
V 2.00
Features
• Available in Ceramic and TO-5 packages • 40 dB Matched Attenuation • Low Insertion Loss
AT-332 (TO-5-4)
Guaranteed Specifications1
Frequency Range Insertion Loss VSWR DC – 2.0 GHz DC – 1.0 GHz Attenuation |
 Tyco Electronics |
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| 3 | AT-33225 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data
AT-33225
Features
• 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -29 dBc IMD3 @ Pout of 24␣ dBm per tone, 9 |
.gif "Agilent(Hewlett-Packard)"){kind=logo} Agilent(Hewlett-Packard) |
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| 2 | AT-33225-BLK | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data
AT-33225
Features
• 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -29 dBc IMD3 @ Pout of 24␣ dBm per tone, 9 |
Agilent(Hewlett-Packard) |
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| 1 | AT-33225-TR1 | 4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data
AT-33225
Features
• 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -29 dBc IMD3 @ Pout of 24␣ dBm per tone, 9 |
Agilent(Hewlett-Packard) |
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| Número de pieza | Descripción | Fabricantes | |
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