Datasheet ASISD1425 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ASISD1425	NPN SILICON RF POWER TRANSISTOR SD1425 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1425 is Designed for Class AB Linear Base Station Applications in the 800-900 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Common Emitter • Emitter Ballast Resistors PACKAGE STYLE .230 6L FLG M	Advanced Semiconductor

ASISD1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ASISD1530-7	NPN SILICON RF POWER TRANSISTOR ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM R	Advanced Semiconductor
ASISD1425	NPN SILICON RF POWER TRANSISTOR SD1425 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1425 is Designed for Class AB Linear Base Station Applications in the 800-900 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Common Emitter • Emitter Ballast Resistors PACKAGE	Advanced Semiconductor
ASISD1006	NPN SILICON HIGH FREQUENCY TRANSISTOR SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC VCEO VCBO PDISS TJ TSTG θJC 400 mA 30 V 50 V 3.5 W @ TC = 25 °C -65 °C to +200 °C -65	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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