Datasheet ASI10636 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ASI10636	NPN SILICON RF POWER TRANSISTOR OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: The ASI OSC-0.3C is Designed for B A FEATURES: • • • Omnigold™ Metalization System C F E D MAXIMUM RATINGS IC VCB PDISS TJ TSTG θ JC 225 mA 25 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC to +200 OC 30 OC/W O	Advanced Semiconductor

ASI10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ASI10714	NPN SILICON RF POWER TRANSISTOR VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System C D F E H I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ J	Advanced Semiconductor
ASI10565	NPN SILICON RF POWER TRANSISTOR AVD250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: The ASI AVD250 is Designed for 2X B C F ØD E 4x .062 x 45° A .025 x 45° FEATURES: • Input Matching Network • • Omnigold™ Metalization System DIM A B C H L G I J K P M MINIMUM inches / mm	Advanced Semiconductor
ASI10547	NPN SILICON RF POWER TRANSISTOR AJT085 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG A .025 x 45° DESCRIPTION: C 2X B ØD 4x .062 x 45° The ASI AJT085 is Designed for E F G FEATURES: • Input Matching Network • • Omnigold™ Metalization System H I J K P M N L DIM A B C D E MINI	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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