| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | ASI10620 | NPN SILICON RF POWER TRANSISTOR MLN1027SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System S D S G ØB MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A D ØC 40 V 28 V 3.5 V 7.0 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 25 OC/W O O DIM A B C D E F .275 / 6.99 .004 / 0.10 |
 Advanced Semiconductor |
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Recommended search results related to ASI10620 |
| Part No | Description ( Function) | Manufacturers | |
| ASI10600 | NPN SILICON RF POWER TRANSISTOR HF8-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System B .112 x 45° A E B C E C D E Ø.125 NOM. FULL |
Advanced Semiconductor |
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| ASI10601 | NPN SILICON RF POWER TRANSISTOR HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATING |
Advanced Semiconductor |
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| ASI10602 | NPN SILICON RF POWER TRANSISTOR HF15-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF15-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 21 dB min. at 15 W/30 MHz • IMD3 = -30 dBc max. at 15 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM |
Advanced Semiconductor |
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| ASI10603 | NPN SILICON RF POWER TRANSISTOR HF15-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF15-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • • • Omnigold™ Metalization System B D S ØC S G H I J D MAXIMUM RATINGS #8-32 UNC-2A G F E IC VCBO VCEO VEBO PDISS TJ T STG |
Advanced Semiconductor |
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| ASI10604 | NPN SILICON RF POWER TRANSISTOR HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM |
Advanced Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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