ASI10601 データシート PDFこの部品の機能は「NPN SilICon Rf Power Transistor」です。 |
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部品番号 |
ASI10601 NPN SILICON RF POWER TRANSISTOR HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • O Advanced Semiconductor |
文字列「 ASI10601 」「 10601 」で始まる検索結果です。 |
部品説明 |
LBT10601 SAW Filter China Electronics Technology Group Corporation No.26 Research Institute 106.8MHz SAW Filter 8.1MHz Bandwidth Part Number: LBT10601 www.sipatsaw.com SIPAT Co., Ltd. Specifications Parameter Center Frequency Insertion Loss 3 dB Bandwidth Unit MHz dB MHz MHz SIPAT |
PTFA210601E Thermally-Enhanced High Power RF LDMOS FET PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include Infineon |
PTFA210601F Thermally-Enhanced High Power RF LDMOS FET PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include Infineon |
UM10601 LPC800 User manual D R A FT D R A FT D R A FT D R A FT D R A FT UM10601 LPC800 User manual Rev. 1.0 — 7 November 2012 D D Preliminary user manual D D R R A A FT FT D D R A FT D D R A FT D R A FT D R A R A FT R A FT D R A FT D R A F R A FT D FT D R A D A FT D R A R FT R Document inf NXP Semiconductors |
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