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Datasheet AS4LC8M8S0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | AS4LC8M8S0 | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
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4 | AS4LC8M8S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
|
3 | AS4LC8M8S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
|
2 | AS4LC8M8S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
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Número de pieza | Descripción | Fabricantes | |
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