AS4LC4M16S0-8TC データシート PDFこの部品の機能は「3.3v 4mx16 And 8mx8 Cmos Synchronous Dram」です。 |
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部品番号 |
AS4LC4M16S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 w ETC |
文字列「 AS4LC4M16S08 」「 4LC4M16S0 」で始まる検索結果です。 |
部品説明 |
AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc ETC |
AS4LC4M16S0-10FTC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc ETC |
AS4LC4M16S0-10TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc ETC |
AS4LC4M16S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc ETC |
UPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged NEC |
UPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777,216 bits (4,194,304 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416004 is packaged i NEC |
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