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AS4LC4M16S0 データシート PDF

この部品の機能は「3.3v 4mx16 And 8mx8 Cmos Synchronous Dram」です。


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部品番号
AS4LC4M16S0

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM


Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 w


ETC
ETC

データシート pdf



文字列「 AS4LC4M16S0 」「 4LC4M16S0 」で始まる検索結果です。

部品説明

AS4LC4M16S0-10FTC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc

ETC
ETC

 データシート pdf


AS4LC4M16S0-10TC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc

ETC
ETC

 データシート pdf


AS4LC4M16S0-75TC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc

ETC
ETC

 データシート pdf


AS4LC4M16S0-8TC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Advance information ® AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenc

ETC
ETC

 データシート pdf


UPD4416001

16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged

NEC
NEC

 データシート pdf


UPD4416004

16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT

DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777,216 bits (4,194,304 words by 4 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416004 is packaged i

NEC
NEC

 データシート pdf

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