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Datasheet AS4LC4M16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | AS4LC4M16 | 4 MEG x 16 DRAM DRAM
Austin Semiconductor, Inc. 4 MEG x 16 DRAM
Extended Data Out (EDO) DRAM
FEATURES
• Single +3.3V ±0.3V power supply. • Industry-standard x16 pinout, timing, functions, and package. • 12 row, 10 column addresses • High-performance CMOS silicon-gate process • All inputs, outputs and clo |
 Austin Semiconductor |
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| 5 | AS4LC4M16S0 | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
 ETC |
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| 4 | AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
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| 3 | AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Advance information
®
AS4LC8M8S0 AS4LC4M16S0
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Features
• PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge |
ETC |
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