Datasheet AS4LC1M16E5 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AS4LC1M16E5	3V 1M x 16 CMOS DRAM AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time • Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ • Extended dat	Alliance Semiconductor

AS4LC1M1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AS4LC1M16E5	3V 1M x 16 CMOS DRAM AS4LC1M16E5 ® 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time • Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS	Alliance Semiconductor
AS4LC1M16S1	(AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM May 2001 Preliminary ® 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address AS4LC2M8S1 AS4L	Alliance Semiconductor
AS4LC1M16S0	(AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM May 2001 Preliminary ® 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM Features • Organization - 1,048,576 words × 8 bits × 2 banks (2M × 8) 11 row, 9 column address - 524,288 words × 16 bits × 2 banks (1M × 16) 11 row, 8 column address AS4LC2M8S1 AS4L	Alliance Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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