AS4C1M16S データシート PDFこの部品の機能は「1m X 16 Bit Synchronous Dram」です。 |
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部品番号 |
AS4C1M16S 1M x 16 bit Synchronous DRAM AS4C1M16S 1M x 16 bit Synchronous DRAM (SDRAM) Alliance Confidential Features • • • • • • Fast access time: 5.4ns Fast clock rate: 143 MHz Self refresh mode: standard Internal pipelined ar Alliance Memory |
文字列「 AS4C1M16 」「 4C1M16S 」で始まる検索結果です。 |
部品説明 |
AS4C1M16E5 5V 1M x 16 CMOS DRAM $XJXVW $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time • 1024 refresh cycles, 16 ms refresh interval - RAS-only o Alliance Semiconductor |
AS4C1M16F5 5V 1M x 16 CMOS DRAM August 2001 ® AS4C1M16F5 5V 1M×16 CMOS DRAM (fast-page mode) Features • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time • Low power consumption - Active: 880 mW max (AS4 Alliance Semiconductor |
1N4116 SILICON 500mA LOW NOISE ZENER DIODES Microsemi Corporation |
1N4116 500mW LOW NOISE SILION ZENER DIODES Jinan Gude Electronic Device |
1N4116 LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE LOW LEVEL ZENER DIODES LOW CURRENT: 250µA - LOW NOISE 1N4099-1N4121 ** 1N4614-1N4627 PART NUMBER 1N4099 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107 1N4108 1N4109 1N4110 1N4111 1N4112 1N4113 1N4114 1N4115 1N4116 1N4117 1N4118 1N4119 1N4120 1N4121 1N4614 1N4615 1N4616 Knox SemiconductorInc |
1N4116 LOW CURRENT OPERATION AT 250 uA • 1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µ A • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • METALLURGICALLY BONDED 1N4099 thru 1N4135 and 1N4099-1 thru 1N4135-1 MAXIMUM RATINGS Junctio Compensated Deuices Incorporated |
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