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Datasheet AQV224N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AQV224N | PhotoMOS Relays RF (Radio Frequency) Type [1-Channel (Form A) Type] —Low On resistance— FEATURES
8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.6±0.2 .142±.008
PhotoMOS RELAYS
4. Low-level off state leakage current The SSR has an off state leakage cu |  Aromat | relay |
AQV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AQV1 | PhotoMOS RELAYS AQV112KL
GU (General Use) Type DIP 6-Pin Series 1-Channel (Form A) with Short Circuit Protection (Non Latch Type) FEATURES
8.8 .346 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142
VDE
PhotoMOS RELAYS
TYPICAL APPLICATIONS
• Industrial equipment • Traffic signal control • Security equipment
mm  Etc relay | | |
| 2 | AQV101 | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | | |
| 3 | AQV101A | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | | |
| 4 | AQV102 | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | | |
| 5 | AQV102A | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | | |
| 6 | AQV103 | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | | |
| 7 | AQV103A | HF (High Function) Type [1-Channel (Form A) Type] HF (High Function) Type [1-Channel (Form A) Type]
PhotoMOS RELAYS
7. Low-level off state leakage current 8. Eliminates the need for a power supply to drive the power MOSFET A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in ea Etc data | |
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