APW1680 データシート PDFこの部品の機能は「3-channel Power Supply Supervisor」です。 |
検索結果を表示する |
部品番号 |
APW1680 3-Channel Power Supply Supervisor APW1680 3-Channel Power Supply Supervisor Features • ! Over Voltage Protection and Lock Out for 3.3 V, 5 V, and 12 V Under Voltage Protection and Lock Out for 3.3 V and 5 V Fault Protection Output ANPEC |
文字列「 APW1680 」「 1680 」で始まる検索結果です。 |
部品説明 |
0316809CT3C IBM0316809CT3C datasheet.jpom DataShee datasheet.jpom DataSheet4 U .com et4U.com datasheet.jpom DataShee datasheet.jpom DataSheet4 U .com et4U.com datasheet.jpom DataShee datasheet.jpom DataSheet4 U .com www.DataShe IBM Microelectronics |
2SA1680 TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High collector power dissipation: P Toshiba Semiconductor |
2SD1680 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1680 DESCRIPTION ·With TO-3PFa package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNI SavantIC |
2SK1680 N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1680 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS ·high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL Inchange Semiconductor |
41680 Toroidal Surface Mount Inductors 4100 SERIES Toroidal Surface Mount Inductors SELECTION GUIDE Nominal Inductance Inductance Range DC Resistance MAX DC Current Continuous Order Code 412R7 414R7 416R8 41100 41150 41220 41330 41470 41680 41101 41151 41221 41331 µH 2.7 4.7 6.8 10 15 22 33 47 68 100 150 220 330 C&D Technologies |
42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM IS42S81600A, IS42S16800A, IS42S32400A, 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166,143,100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Integrated Silicon Solution Inc |
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