APV2111VY データシート PDFこの部品の機能は「PhotovoltaIC Mosfet」です。 |
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部品番号 |
APV2111VY Photovoltaic MOSFET Photovoltaic MOSFET Driver Photovoltaic MOSFET drivers of wide variation Photovoltaic MOSFET Driver (APV1, 2) FEATURES TYPICAL APPLICATIONS 1. High-speed switching • Power supply (Vcc) for elec Panasonic |
文字列「 APV2111 」「 2111VY 」で始まる検索結果です。 |
部品説明 |
APV2111VW Photovoltaic MOSFET Photovoltaic MOSFET Driver Photovoltaic MOSFET drivers of wide variation Photovoltaic MOSFET Driver (APV1, 2) FEATURES TYPICAL APPLICATIONS 1. High-speed switching • Power supply (Vcc) for electronic Since release time is typ. 0.1 ms, the circuits MOSFET can be turned o Panasonic |
10321111 High-Density Programmable Logic Specifications ispLSI and pLSI 1032 ispLSI and pLSI 1032 ® ® High-Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers — Wide Input Gating for Lattice Semiconductor |
2SD2111 Silicon NPN Triple Diffused Transistor 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Collector t Hitachi Semiconductor |
2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance NEC |
2SK2111 MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 + Kexin |
2SK2111-HF N-Channel MOSFET SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) < 0.45Ω (VGS = 10V) ● RDS(ON) < 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G Kexin |
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