APTGT600SK60 データシート PDFこの部品の機能は「Buck Chopper Trench + Field Stop Igbt Power Module」です。 |
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部品番号 |
APTGT600SK60 Buck chopper Trench + Field Stop IGBT Power Module www.Datasheet.jp APTGT600SK60 Buck chopper Trench + Field Stop IGBT® Power Module VBUS Q1 G1 VCES = 600V IC = 600A* @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power S Advanced Power Technology |
文字列「 APTGT600SK60 」「 600SK60 」で始まる検索結果です。 |
部品説明 |
BP60060 SAW Filter 70 MHz Bandpass SAW Filter 70 MHz Bandpass SAW Filter 30 MHz Bandwidth Complies with Directive 2002/95/EC (RoHS Compliant) BP60060 Specifications Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband Vanlong Technology |
LT60060-x Class T Fuse Blocks Class T Fuse Blocks 300 and 600 Volt SPECIFICATIONS Voltage Ratings: 300 Volts AC 600 Volts AC Ampere Ratings: 0 – 600 amperes Approvals: UL Listed (File No. E14721) CSA Certified (File No. LR73091) RECOMMENDED FUSES JLLN (300V) and JLLS (600V) series fuse Littelfuse |
MBR60060CT (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
MBR60060CT (MBR60045CT - MBR600100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
MBR60060CT Silicon Power Schottky Diode Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices ha GeneSiC |
MBR60060CTR (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
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