APTGT300DU60 データシート PDFこの部品の機能は「Igbt Power Module」です。 |
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部品番号 |
APTGT300DU60 IGBT Power Module APTGT300DU60 Dual common source Trench + Field Stop IGBT® www.Datasheet.jp Power Module C1 Q1 G1 C2 Q2 G2 VCES = 600V IC = 300A @ Tc = 80°C Application • AC Switches • Switched Mode Power Su Advanced Power Technology |
文字列「 APTGT300DU60 」「 300DU60 」で始まる検索結果です。 |
部品説明 |
APTGT300DU60G IGBT Power Module APTGT300DU60G Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 600V IC = 300A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT Microsemi Corporation |
CPT30060 Schottky PowerMod Microsemi Corporation |
CPT30060 300 Amp Rectifier 30 to 90 Volts Schottky Barrier MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# CPT30035 THRU CPT30090 300 Amp Schottky Barrier Rectifier 30 to 90 Volts Power Mod ( Twin Tower ) A Metal of siliconrectifier, majont Micro Commercial Components |
MBR30060CT 300 Amp Rectifier 20 to 100 Volts Schottky Barrier MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR30020CT THRU MBR300100CT 300 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier c Micro Commercial Components |
MBR30060CT (MBR30045CT - MBR300100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
MBR30060CT (MBR30045CT - MBR300100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
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