APTGT150TDU60P データシート PDFこの部品の機能は「Igbt Power Module」です。 |
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部品番号 |
APTGT150TDU60P IGBT Power Module APTGT150TDU60P Triple Dual Common Source Trench + Field Stop IGBT® Power Module C1 C3 C5 VCES = 600V IC = 150A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterru Advanced Power Technology |
文字列「 APTGT150TDU60 」「 150TDU60P 」で始まる検索結果です。 |
部品説明 |
APTGT150TDU60PG IGBT Power Module APTGT150TDU60PG Triple Dual Common Source Trench + Field Stop IGBT® Power Module C1 C3 C5 VCES = 600V IC = 150A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies E5/E6 G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E2 E4 E6 G2 Microsemi |
MRF15060 RF POWER BIPOLAR TRANSISTORS ( DataSheet : ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The h Motorola Semiconductors |
MRF15060S RF POWER BIPOLAR TRANSISTORS ( DataSheet : ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The h Motorola Semiconductors |
MSRT15060 (MSRT15060 - MSRT150100A) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
MSRT15060A (MSRT15060 - MSRT150100A) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
RHRU15060 150A/ 600V Hyperfast Diode RHRU15060 Data Sheet January 2000 File Number 3089.3 150A, 600V Hyperfast Diode The RHRU15060 is a hyperfast diode with soft recovery characteristics (trr < 60ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial plan Intersil Corporation |
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