APTGT100H120G データシート PDFこの部品の機能は「Igbt Power Module」です。 |
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部品番号 |
APTGT100H120G IGBT Power Module www.Datasheet.jp APTGT100H120G Full - Bridge Fast Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies � Advanced Power Technology |
文字列「 APTGT100H120 」「 100H120G 」で始まる検索結果です。 |
部品説明 |
APTGT100H120 IGBT Power Module APTGT100H120 Full - Bridge Fast Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fast Trench + Fie Advanced Power Technology |
HRU100120 RHRU100120 RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated io Intersil Corporation |
R6100120 General Purpose Rectifier (200-300 Amperes Average 1200 Volts) Powerex Power Semiconductors |
RHRU100120 100A/ 1200V Hyperfast Diode RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial p Intersil Corporation |
RURU100120 100A/ 1200V Ultrafast Diode RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode The RURU100120 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. Intersil Corporation |
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